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DOUBLE-SIDED (BIFACIAL) HETEROJUNCTION SILICON SOLAR CELLS HAVE BEEN FABRICATED BY HOT-WIRE CVD ON BOTH P- AND N-TYPE CEYSTALLINE SILICON SUBSTRATES. IN THESE DEVICES, DOPED MICROCRYSTALINE SILICON LAYERES ARE COMBINED WITH THIN INTRINSIC AMORPHOUS DILICON BUFFERS. SUCH HETEROJUNCTION WITH INTRINSIC THIN LAYER CONCEPT IS APPLIED TO OBTAIN BOTH THE LOW TEMPERATURE DEPOSITED EMMITER AND BACK SURFACE FIELD CONTACT.